Nanowerk

Are diamonds GaN's best friend? Revolutionizing transistor technology

(Nanowerk News) Researchers at Osaka Metropolitan University are proving that diamonds are so much more than just a girl’s best friend. Their groundbreaking research focuses on gallium nitride (GaN) ...
EDN

First GaN half-bridge transistor integrates two GaN FETs

Today, the most common building block used in power conversion is the half bridge. It is the starting point for the journey towards a power system-on-a-chip. The EPC2100 is the first commercially ...
Electronic Design

GaN Basics: FAQs

The power semiconductor evolution started with germanium and selenium devices that succumbed to silicon types around the 1950s. Broader silicon usage stemmed from its improved physical properties ...
Electronic Design

GaN HEMTs Bring Low-Noise Power to Switching Apps

What are GaN HEMTs and why are they important? How GaN devices can handle kilowatt power conversion. Gallium-nitride (GaN) high electron mobility transistors (HEMTs) are a form of field-effect ...
Business Wire

Rad Hard GaN Transistors Offering Highest Density and Efficiency on the Market for Demanding Space Applications Available from EPC

EL SEGUNDO, Calif.--(BUSINESS WIRE)--EPC announces the introduction of the EPC7004 radiation-hardened GaN FET. The EPC7004 is a 100 V, 7 mΩ, 160 A Pulsed, rad-hard GaN FET in a small 6.56 mm 2 ...
Business Wire

Panasonic to Start Mass Production of High-speed Gate Driver Dedicated to GaN Power Transistor X-GaN (TM)

MUNICH, Germany--(BUSINESS WIRE)--Panasonic Corporation today announced that it will start mass production of a high-speed gate driver (AN34092B) optimized for driving its GaN power transistor X-GaN ...
EurekAlert!

GaN transistors and high-power amplifiers for millimeter wave satellite communications

Communication satellites and flying antenna platforms can contribute to the comprehensive and resilient operation of global mobile networks of the fifth and sixth generation (5G, 6G). However, as ...
EDN

GaN transistors drive long-pulse radar

Ampleon has launched four 700-W GaN-on-SiC RF transistors for S-band radar systems, operating between 2.7 GHz and 3.5 GHz. The CLS3H2731 and CLS3H3135 series leverage a radar-optimized GaN-on-SiC ...
Digital Journal

GaN Systems Launches New Higher Performance, Low-Cost Transistor for Consumer, Industrial, and Data Center Applications

OTTAWA, Canada – June 15, 2022 – GaN Systems, the global leader in GaN (gallium nitride) power semiconductors, today introduced a new transistor in the industry’s broadest portfolio of GaN power ...
Design News

GaN Transistor Unlocks the Power of 5G

While 5G applications are proliferating everywhere, the industry continues to face a myriad of challenges implementing the technology. One of them has been the performance limitations of ...
Business Insider

GaN Systems Extends Market Leadership with Next Generation Automotive-Qualified Transistors

OTTAWA, ON / ACCESSWIRE / October 20, 2020 / GaN Systems, the global leader in GaN power semiconductors, today announced the release and availability of the first product in a family of new 650V, 60A ...
EurekAlert!

Are diamonds GaN’s best friend? Revolutionizing transistor technology

The integration of a 3C-SiC layer between GaN and diamond significantly reduces thermal resistance at the interface and improves heat dissipation, allowing for better performance. Researchers at Osaka ...