Alpha and Omega Semiconductor unveiled its MOS E2 600V Super Junction MOSFET platform. The first high-voltage product from the new platform ...
Abstract: This study aimed to evaluate the reliability of Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) under extremely high gate voltage stress. The research ...
Abstract: In this study, a novel asymmetric trench SiC MOSFET structure (M-ATMOS) with the integrated MOS channel diode (MCD) was proposed and simulated using TCAD simulation. In the reverse ...
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